DMTH8030LPDWQ-13

Diodes Incorporated

DMTH8030LPDWQ-13

Datasheet

Analog & Power

MOSFET 2N-CH 80V 28.5A PWRDI50

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs26mOhm @ 10A, 10V
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds631pF @ 40V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage80V
Current - Continuous Drain (Id) @ 25°C28.5A (Tc)
Power - Max3.1W (Ta), 41W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UXD)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101