DMTH6016LFVW-7

Diodes Incorporated

DMTH6016LFVW-7

Datasheet

Analog & Power

MOSFET N-CH 60V 41A POWERDI3333

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds939 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Max Power Dissipation1.2W (Ta)

Mechanical

PackageTape & Reel (TR)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101