DMTH47M2SPSW-13

Diodes Incorporated

DMTH47M2SPSW-13

Datasheet

Analog & Power

MOSFET BVDSS: 31V~40V POWERDI506

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.5mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds897 pF @ 20 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C73A (Tc)
Max Power Dissipation3.3W (Ta), 68W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UX)

Environmental

Operating Temperature-55°C~175°C(TJ)