DMTH4001SPSQ-13

Diodes Incorporated

DMTH4001SPSQ-13

Analog & Power

MOSFET BVDSS: 31V~40V POWERDI506

Obsolete8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10787 pF @ 20 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusObsolete
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C225A (Tc)
Max Power Dissipation3.1W (Ta), 187.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type K)

Environmental

Operating Temperature-55°C~175°C(TJ)