DMTH10H072LPS-13

Diodes Incorporated

DMTH10H072LPS-13

Datasheet

Analog & Power

MOSFET BVDSS: 61V~100V POWERDI50

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs57mOhm @ 4.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds266 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation1.5W (Ta), 51.7W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UX)

Environmental

Operating Temperature-55°C~175°C(TJ)