DMTH10H032SPSWQ-13

Diodes Incorporated

DMTH10H032SPSWQ-13

Datasheet

Analog & Power

MOSFET BVDSS: 61V~100V PowerDI50

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs32mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds544 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Max Power Dissipation3.2W (Ta), 38W (Tc)

Mechanical

PackageBulk

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101