DMTH10H032LPDWQ-13

Diodes Incorporated

DMTH10H032LPDWQ-13

Datasheet

Analog & Power

MOSFET 2N-CH 100V 24A POWERDI50

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs32mOhm @ 5A, 10V
Configuration2 N-Channel
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds683pF @ 50V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Power - Max3W (Ta), 37W (Tc)

Mechanical

PackageBulk
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UXD)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101