DMTH10H010LCT

Diodes Incorporated

DMTH10H010LCT

Datasheet

Analog & Power

MOSFET N-CH 100V 108A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.5mOhm @ 13A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2592 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C108A (Tc)
Max Power Dissipation2.4W (Ta), 166W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C ~ 175°C (TJ)