DMTH10H005LCT

Diodes Incorporated

DMTH10H005LCT

Datasheet

Analog & Power

MOSFET N-CH 100V 140A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5mOhm @ 13A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3688 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Max Power Dissipation187W (Tc)

Mechanical

PackageTube

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101