DMT8030LFDF-13

Diodes Incorporated

DMT8030LFDF-13

Datasheet

Analog & Power

MOSFET BVDSS: 61V~100V U-DFN2020

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds641 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Max Power Dissipation1.2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type F)

Environmental

Operating Temperature-55°C~150°C(TJ)