DMT8008LSS-13

Diodes Incorporated

DMT8008LSS-13

Datasheet

Analog & Power

MOSFET BVDSS: 61V-100V SO-8

ActiveTape & Reel (TR)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
Base Product NumberDMT8008
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2840 pF @ 40 V
ManufacturerDiodes Incorporated
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.8V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 32A (Tc)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)