DMT8007LPSW-13

Diodes Incorporated

DMT8007LPSW-13

Datasheet

Analog & Power

MOSFET BVDSS: 61V~100V POWERDI50

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.5mOhm @ 14A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2682 pF @ 40 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.8V @ 1mA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Max Power Dissipation1.5W (Ta), 104W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UX)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)