DMT69M8LPS-13

Diodes Incorporated

DMT69M8LPS-13

Analog & Power

MOSFET N-CHA 60V 10.2A POWERDI

Obsolete8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 13.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1925 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10.2A (Ta), 70A (Tc)
Max Power Dissipation2.3W (Ta), 113W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101