DMT69M5LH3

Diodes Incorporated

DMT69M5LH3

Datasheet

Analog & Power

MOSFET BVDSS: 41V~60V TO251 TUBE

ActiveTO-251-3 Stub Leads, IPakAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10.5mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1406 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Max Power Dissipation3.3W (Ta), 96W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Stub Leads, IPak
Supplier Device PackageTO-251

Environmental

Operating Temperature-55°C~150°C(TJ)