DMT6018LDR-13

Diodes Incorporated

DMT6018LDR-13

Datasheet

Analog & Power

MOSFET 2N-CH 60V 8.8A 8VDFN

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17mOhm @ 8.2A, 10V
Base Product NumberDMT6018
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds869pF @ 30V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta)
Power - Max1.9W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackageV-DFN3030-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)