DMT6015LFVW-7

Diodes Incorporated

DMT6015LFVW-7

Datasheet

Analog & Power

MOSFET BVDSS: 41V~60V POWERDI333

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds808 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 31.8A (Tc)
Max Power Dissipation2.8W (Ta), 28.4W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8 (SWP) Type UX

Environmental

Operating Temperature-55°C~150°C(TJ)