DMT6012LFV-13

Diodes Incorporated

DMT6012LFV-13

Datasheet

Analog & Power

MOSFET N-CH 60V 43.3A PWRDI3333

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1522 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C43.3A (Tc)
Max Power Dissipation1.95W (Ta), 33.78W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8 (Type UX)

Environmental

Operating Temperature-55°C~150°C(TJ)