DMT6011LPDW-13

Diodes Incorporated

DMT6011LPDW-13

Datasheet

Analog & Power

MOSFET 2N-CH 60V 10.3A POWERDI50

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 10A, 10V
Base Product NumberDMT6011
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1072pF @ 30V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C10.3A (Ta), 40A (Tc)
Power - Max2.5W (Ta), 37.9W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UXD)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)