DMT6009LK3-13

Diodes Incorporated

DMT6009LK3-13

Datasheet

Analog & Power

MOSFET N-CH 60V 13.3A/57A TO252

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10mOhm @ 13.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1925 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C13.3A (Ta), 57A (Tc)
Max Power Dissipation2.6W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)