DMT6006SPS-13

Diodes Incorporated

DMT6006SPS-13

Datasheet

Analog & Power

MOSFET N-CH 60V PWRDI5060

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.2mOhm @ 10.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1721 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C16.2A (Ta), 98A (Tc)
Max Power Dissipation2.45W (Ta), 89.3W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)