DMT47M2SFVW-7

Diodes Incorporated

DMT47M2SFVW-7

Datasheet

Analog & Power

MOSFET N-CH 40V PWRDI3333

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.5mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds897 pF @ 20 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C15.4A (Ta), 49.1A (Tc)
Max Power Dissipation2.67W (Ta), 27.1W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8 (SWP) Type UX

Environmental

Operating Temperature-55°C ~ 150°C (TJ)