DMT35M4LFDF4-13

Diodes Incorporated

DMT35M4LFDF4-13

Datasheet

Analog & Power

MOSFET BVDSS: 25V~30V X2-DFN2020

Active6-PowerXDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1009 pF @ 15 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Max Power Dissipation910mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-PowerXDFN
Supplier Device PackageX2-DFN2020-6 (Type W)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)