DMT3009UFVW-13

Diodes Incorporated

DMT3009UFVW-13

Datasheet

Analog & Power

MOSFET N-CH 30V 10.6A/30A PWRDI

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11mOhm @ 11A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds894 pF @ 15 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.8V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10.6A (Ta), 30A (Tc)
Max Power Dissipation1.2W (Ta), 2.6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8 (SWP) Type UX

Environmental

Operating Temperature-55°C~150°C(TJ)