DMT3009LDT-7

Diodes Incorporated

DMT3009LDT-7

Datasheet

Analog & Power

MOSFET 2N-CH 30V 30A 8VDFN

Active8-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11.1mOhm @ 14.4A, 10V
Base Product NumberDMT3009
Configuration2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs20nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C30A
Power - Max1.2W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-VDFN Exposed Pad
Supplier Device PackageV-DFN3030-8 (Type K)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)