DMT2004UFDF-7

Diodes Incorporated

DMT2004UFDF-7

Datasheet

Analog & Power

MOSFET N-CH 24V 14.1A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6mOhm @ 9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1683 pF @ 15 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.45V @ 250µA

Electrical

Drain-to-Source Voltage24 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C14.1A (Ta)
Max Power Dissipation800mW (Ta), 12.5W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101