DMT15H053SK3-13

Diodes Incorporated

DMT15H053SK3-13

Datasheet

Analog & Power

MOSFET BVDSS: 101V~250V TO252 T&

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds814 pF @ 75 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Max Power Dissipation1.7W (Ta)

Mechanical

PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252 (DPAK)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)