DMT12H060LFDF-7

Diodes Incorporated

DMT12H060LFDF-7

Datasheet

Analog & Power

MOSFET BVDSS: 101V~250V U-DFN202

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs65mOhm @ 3A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds475 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.4V @ 250µA

Electrical

Drain-to-Source Voltage115 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.4A (Ta)
Max Power Dissipation1.1W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type F)

Environmental

Operating Temperature-55°C~150°C(TJ)