DMT10H072LFDF-7

Diodes Incorporated

DMT10H072LFDF-7

Datasheet

Analog & Power

MOSFET N-CH 100V 4A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs62mOhm @ 4.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds266 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Max Power Dissipation800mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type F)

Environmental

Operating Temperature-55°C~150°C(TJ)