DMT10H032LDV-7

Diodes Incorporated

DMT10H032LDV-7

Datasheet

Analog & Power

MOSFET 2N-CH 100V 18A PWRDI3333

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs36mOhm @ 10A, 10V
Base Product NumberDMT10
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds683pF @ 50V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Power - Max1W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8 (Type UXC)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)