DMT10H015LK3-13

Diodes Incorporated

DMT10H015LK3-13

Datasheet

Analog & Power

MOSFET N-CHANNEL 100V 50A TO252

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1871 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Max Power Dissipation2.9W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252-3

Environmental

Operating Temperature-55°C~150°C(TJ)