DMT10H015LFG-7

Diodes Incorporated

DMT10H015LFG-7

Datasheet

Analog & Power

MOSFET N-CH 100V PWRDI3333

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13.5mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1871 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 42A (Tc)
Max Power Dissipation2W (Ta), 35W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePOWERDI3333-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)