DMT10H015LCG-7

Diodes Incorporated

DMT10H015LCG-7

Datasheet

Analog & Power

MOSFET N-CH 100V 9.4A/34A 8DFN

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1871 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 34A (Tc)
Max Power Dissipation1W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackageV-DFN3333-8

Environmental

Operating Temperature-55°C~155°C(TJ)