DMT10H010LSSQ-13

Diodes Incorporated

DMT10H010LSSQ-13

Datasheet

Analog & Power

MOSFET BVDSS: 61V~100V SO-8 T&R

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.5mOhm @ 13A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs58.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4166 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.8V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Max Power Dissipation1.9W (Ta)

Mechanical

PackageTape & Reel (TR)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101