DMT10H009LCG-7

Diodes Incorporated

DMT10H009LCG-7

Datasheet

Analog & Power

MOSFET N-CH 100V 12.4A/47A 8DFN

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.8mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2309 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12.4A (Ta), 47A (Tc)
Max Power Dissipation1W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackageV-DFN3333-8 (Type B)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)