Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3775 pF @ 15 V |
| Manufacturer | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Max Power Dissipation | 1.7W (Ta) |
| Package | Bulk |
|---|---|
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PowerDI5060-8 (Type Q) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|