DMPH16M1UPSW-13

Diodes Incorporated

DMPH16M1UPSW-13

Datasheet

Analog & Power

MOSFET BVDSS: 8V~24V PowerDI5060

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6mOhm @ 15A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs164 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds5392 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
PackagingBulk
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Max Power Dissipation1.95W

Mechanical

Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UX)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)