DMP65H13D0HSS-13

Diodes Incorporated

DMP65H13D0HSS-13

Datasheet

Analog & Power

MOSFET BVDSS: 501V~650V SO-8 T&R

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13Ohm @ 250mA, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds582 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Max Power Dissipation1.9W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)