DMP45H4D9HJ3

Diodes Incorporated

DMP45H4D9HJ3

Datasheet

Analog & Power

MOSFET P-CH 450V 4.6A TO251

ActiveTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.9Ohm @ 1.05A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds547 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage450 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Max Power Dissipation104W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251

Environmental

Operating Temperature-55°C ~ 150°C (TJ)