DMP3105LVT-7

Diodes Incorporated

DMP3105LVT-7

Datasheet

Analog & Power

MOSFET P-CH 30V 3.1A TSOT23-6

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 4.2A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds839 pF @ 15 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Max Power Dissipation1.15W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-26

Environmental

Operating Temperature-55°C ~ 150°C (TJ)