Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 100mA, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17 pF @ 15 V |
| Manufacturer | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Max Power Dissipation | 460mW (Ta) |
| Package | Bulk |
|---|---|
| Package / Case | 3-XFDFN |
| Supplier Device Package | X2-DFN1006-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|