Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 78mOhm @ 500mA, 8V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.34 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 143 pF @ 10 V |
| Manufacturer | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Max Power Dissipation | 660mW |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 3-XFDFN |
| Supplier Device Package | X4-DSN1006-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|