DMP2003UPS-13

Diodes Incorporated

DMP2003UPS-13

Datasheet

Analog & Power

MOSFET P-CH 20V 150A PWRDI5060-8

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.2mOhm @ 25A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8352 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.4V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Max Power Dissipation1.4W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)