DMP10H400SEQ-13

Diodes Incorporated

DMP10H400SEQ-13

Datasheet

Analog & Power

MOSFET P-CH 100V 2.3A/6A SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs250mOhm @ 5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1239 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta), 6A (Tc)
Max Power Dissipation2W (Ta), 13.7W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)