Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 10Ohm @ 100mA, 0.9V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 6 V |
| Manufacturer | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -6V |
| Vgs(th) (Max) @ Id | 650mV @ 250µA |
| Drain-to-Source Voltage | 12 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 0.9V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 3.3A (Ta) |
| Max Power Dissipation | 820mW (Ta) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 4-UFBGA, WLBGA |
| Supplier Device Package | U-WLB1010-4 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|