DMNH6035SPDW-13

Diodes Incorporated

DMNH6035SPDW-13

Datasheet

Analog & Power

MOSFET 2N-CH 60V 33A POWERDI50

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs35mOhm @ 15A, 10V
Base Product NumberDMNH6035
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds879pF @ 25V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Power - Max2.4W (Ta), 68W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type R)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)