DMN95H2D2HCTI

Diodes Incorporated

DMN95H2D2HCTI

Datasheet

Analog & Power

MOSFET N-CH 950V 6A ITO220AB

ActiveTO-220-3 Full Pack, Isolated TabAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.2Ohm @ 3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1487 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage950 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Max Power Dissipation40W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageITO-220AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)