DMN65D8LT-13

Diodes Incorporated

DMN65D8LT-13

Datasheet

Analog & Power

MOSFET BVDSS: 41V~60V SOT523 T&R

ActiveSOT-523Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5Ohm @ 115mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds24 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C210mA (Ta)
Max Power Dissipation300mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-523
Supplier Device PackageSOT-523

Environmental

Operating Temperature-55°C~150°C(TJ)