DMN65D7LFR4-7

Diodes Incorporated

DMN65D7LFR4-7

Datasheet

Analog & Power

MOSFET BVDSS: 41V~60V X2-DFN1010

Active4-XDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5Ohm @ 40mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.04 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds41 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C260mA (Ta)
Max Power Dissipation600mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case4-XDFN Exposed Pad
Supplier Device PackageX2-DFN1010-4 (Type B)

Environmental

Operating Temperature-55°C~150°C(TJ)