DMN62D1SFB-7B

Diodes Incorporated

DMN62D1SFB-7B

Datasheet

Analog & Power

MOSFET N-CH 60V 410MA 3DFN

Active3-UFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.4Ohm @ 40mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds80 pF @ 40 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C410mA (Ta)
Max Power Dissipation470mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case3-UFDFN
Supplier Device PackageX1-DFN1006-3

Environmental

Operating Temperature-55°C~150°C(TJ)