DMN62D0SFD-7

Diodes Incorporated

DMN62D0SFD-7

Datasheet

Analog & Power

MOSFET N-CH 60V 540MA 3DFN

Active3-UDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2Ohm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds30.2 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C540mA (Ta)
Max Power Dissipation430mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-UDFN
Supplier Device PackageX1-DFN1212-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)